Method of laser machining materials with minimal thermal loading

ABSTRACT

A method of controlling thermal loading of an electronic component material during ablation thereof provides a first laser light beam at a certain power density and fluence and uses the first laser light beam to remove a portion of a first side of the material . A second laser light beam is provided at a certain power density and fluence and the second laser light beam is used to remove a portion of a side of the material opposing the first side thereof substantially simultaneously as the portion of the first side is being removed.

INFORMATION

DETAILED DESCRIPTION OF THE INVENTION

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

With reference to FIG. 1, a preferred embodiment of a laser system is shown for use in the method of the present invention. The laser system includes a IR laser having a resonator cavity which comprises a lasant positioned between a highly reflective mirror and a partially transmissive mirror (or output coupler) along a beam path . The lasant in the resonator cavity is preferably a solid-state laser rod comprising Nd:YAG, Nd:YAP, Nd:YVO4. However, those skilled in the art will recognize that other solid-state lasants or even gas, semiconductor or tunable organic dye lasants could be used in the lasers . For example, suitable gas lasants and their fundamental wavelengths could include Nitrogen (337.1 nm), HeCd (325.0-441.6 nm), Argon (457.9-514.5 nm), Krypton (350.7-799.3 nm), HeNe (632 nm), CO (4.0×103 -5.5×103 nm), CO2 (10.6×103 nm), and H2O (118.3×103 nm). As another example, suitable solid-state lasants could include Ruby (694.3 nm), Nd:Glass (1.06×103 nm), Nd:YAG (1.06×103 nm), Nd:YAP (1.06×103 nm), and Nd:YVO4, while suitable semiconductor lasants could include GaAs (904 nm for a single diode or 850±50 nm for an array of 48 diodes).

Laser rod may be pumped by a variety of pumping sources (not shown) well known to persons skilled in the art, such as thermal, electrical or optical. However, a suitable diode pump or arc lamp is preferred for the illustrated Neodymium based laser system.

The resonator cavity is illustrated with an associated Q-switch which preferably operates by electro-optical or accusto-optical means. Other well known laser components (e.g., polarizers, limiting apertures, attenuators and the like) and their uses, positioning, and operation are well known to those skilled in the art and could be utilized inside the resonator cavities as desired.

The IR output from the resonator is passed through an upcollimator structure , after which it is deflected downwardly along a beam path by a beam-directing reflector into a focusing lens and then to an electronic component material. In the illustrated embodiment, the electronic component material is silicone or a multi-layered target .

Instead of employing an IR laser, any suitable laser can be employed such as a green laser to produce green light (e.g., between about 500 nm to about 580 nm), a UV laser (e.g., UV light at harmonics of 1064 nm fundamental wavelength) or a multiple wavelength laser (e.g., EM radiation at a fundamental wavelength of 1064 nm).

The multi-layered target can be, for example, a circuit board with a top conductor layer , an upper dielectric layer , an embedded conductor layer , a lower dielectric layer , and a bottom conductor layer , respectively. The conductor layers may comprise conductive metals such as copper, aluminum, titanium, nickel, tungsten, platinum, gold, molybdenum, palladium, silver, or combinations thereof. The dielectric layers may comprise an organic composition such as PTFE, polyimides, epoxies, or combinations thereof. The dielectric materials may be reinforced with glass fibers, aramid fibers, KEVLAR, ceramics, or combinations thereof. In the preferred embodiment, the conductor layers are preferably copper and dielectric layers are either RCC or FR4, both of which contain epoxy, an organic dielectric material. FR4 also contains glass reinforcement. It should be apparent that these construction used in the PCB manufacturing are only examples of dielectric conductor layers used to form circuits. The example is only one of a multitude of constructions.

The laser system is preferably used to create vias, e.g., blind or through holes in the electronic component material or target , such as a circuit board. To control thermal loading of the target , machining of the target with a laser system can occur from all or various degrees of freedom, e.g., top, bottom, and sides of the target . For example, with reference to the left-hand portion of FIG. 2, a laser system produces a laser light beam that is split by beam splitter into an upper light beam and a lower light beam . The upper light beam passes through an optical diffuser and ablates the target at an upper portion thereof at a certain fluence and power density. The lower light beam passes through another optical diffuser and ablates a lower portion of the target at certain fluence and power density. The fluence and power density of the beams and can be the same or can be different from each other. As shown in FIG. 2, the light beams and ablate different areas of the target . It can be appreciated that the light beams and can be disposed along a common axis to cut a through hole in the target .

Instead of providing the single laser system to ablate the target , with reference to the right-hand portion of FIG. 2, a first laser system ′ can be used to ablate from the upper surface of the target and a second laser system ″ can be used to ablate from the lower portion of the target . More particularly, the first laser system ′ generates a light beam that passes through an optical diffuser to ablate from the top portion of the target . The second laser system ″ generates a second laser light beam that passes through another optical diffuser to ablate from the lower portion of the target . As shown, the light beams and are aligned axially to create a through hole in the target . The thickness d of the target of FIG. 2 is preferably greater than 200 Angstroms. The fluence and power densities of the beams and can be the same or can be different from each other. It can be appreciated that the beams and need not be aligned axially when different areas of the target are to be ablated.

Hence, by machining or cutting from both sides of the target , thermal loading of the target is minimized while increasing throughput rate. Furthermore, with reference to FIGS. 3A and 3B, a heat assist ablation zone aids in ablation and minimizes thermal loading when both sides of the target are ablated to create a through hole. More particularly, FIG. 3A shows an initial ablation from both the top and bottom of the target . During ablation, material is removed and heat affected zones are created at both the top and the bottom of the target . In addition, near the central portion of the target , as the heat affected zones merge, a heat assist ablation zone is defined which allows for faster and more efficient laser ablation of the target since ablation is then performed on material that is already heated.

With reference to FIG. 4, in a temporal serial processing technique, an initial ablation, simultaneously from both sides of a target , at time t0 results in material being removed and creation of initial heat affected zones at time t1. After a cooling period, (e.g., t1 to t2) the heat affected zones ′ in the target material have diffused, covering a larger area. Another ablation is performed during time t2 to t3 at the top and bottom of the target that results in the heat affected zone along with heat assisted zone . Since the further ablation is performed in the heat affected zones and the heat assisted zone is created, this technique results in faster and more efficient material removal while minimizing thermal loading of the target .

In using the technique described above, it can be appreciated that instead of having the laser light beams axially aligned during ablation to create a through hole, the light beams ablating the target can be located at different areas as in the left hand portion of FIG. . Thus, in a spatial serial processing technique, a first area of the target is initially ablated. Thereafter, a second area is initially ablated while the first area is cooling. Once the initial ablation of the second area is complete, the first area can be further ablated. This process is continued until all areas are fully ablated. As a result, thermal loading of the target is minimized. In either the temporal or spatial serial processing techniques, a low degree of thermal loading is achieved by machining in distinct steps to allow the same amount of fluence to be transferred to the target .

The methods described above minimize thermal loading of the target during machining of through holes or vias therein by working from the top of the target and from the bottom of the target generally simultaneously. Also, different areas of a target can be worked on at different times or time intervals to avoid threshold levels of thermal loading in the surrounding material of the target.

With the disclosed methods, the resulting structures (e.g., vias) are better in quality and allow for improved manufacturing of the devices. The improvement is based on the adjustment of the energy density during the formation of structures i.e., vias, to accomplish:

1. Lower thermal loading

2. Higher throughput rates (adjustment of Fluence/Density during machining process)

3. Improve the cut quality and shape of vias in electronic material, dicing of silicon and related areas

4. Improve the Depth of Field on laser systems.

The laser and methods disclosed herein are applicable to any laser process used to cut, weld, anneal or define shapes on electronic material. The specific electronic material of interest is silicone (used in integrated electronic circuits) and advanced electronic packages/PCBs composed of multiple layers of conductive and non-conductive layers. The method is applicable to any lasers incorporated into laser systems that use a certain power density and fluence at the workpiece.

The foregoing preferred embodiments have been shown and described for the purposes of illustrating the structural and functional principles of the present invention, as well as illustrating the methods of employing the preferred embodiments and are subject to change without departing from such principles. Therefore, this invention includes all modifications encompassed within the spirit of the following claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood from the following detailed description of the preferred embodiments thereof, taken in conjunction with the accompanying drawings, wherein like reference numerals refer to like parts, in which:

FIG. 1 is a schematic illustration of an embodiment of a laser system for use in a method of the present invention.

FIG. 2 is a schematic illustration of a method of machining material using laser systems of the type of FIG. .

FIGS. 3A and 3B show heat affected zones as a result of ablating a target material from both sides thereof to create a through hole.

FIG. 4 show heat affected zones over periods of time as a result of ablating a target material from both sides thereof to create a through hole.

CLAIMS

1. A method of controlling thermal loading of an electronic component material during ablation thereof, the method including: providing a first laser light beam at a certain power density and fluence and using the first laser light beam to remove a portion of a first side of the material, providing a second laser light beam at a certain power density and fluence and using the second laser light beam to remove a portion of a side of the material opposing the first side thereof substantially simultaneously as the portion of the first side is being removed, thereby controlling thermal loading of the material, permitting the first laser light beam to create a first heat affected zone in the workpiece and the second laser light beam to create a second heat affected zone in the workpiece, and permitting the heat affected zones to merge to define a heat assisted ablation zone, the method including ablating through the heat assisted ablation zone.

2. The method of claim 1, wherein the first laser light beam is aligned axially with the second laser light beam to create a through hole in the material.

3. The method of claim 1, wherein the first laser light beam is provided by a first laser system and the second laser light beam is provided by a second laser system.

4. The method of claim 1, wherein the material comprises conductive and non-conductive layers.

5. The method of claim 1, wherein the material has a thickness greater than 200 Angstroms.

6. The method of claim 1, wherein a laser system is provided generating a single laser light beam, the method includes splitting the single laser light beam to define the first laser light beam and the second laser light beam.

7. The method of claim 1, wherein the fluence and power densities of the first and second laser light beams are different from each other.

8. The method of claim 1, wherein the material is composed of silicon.

9. A method of controlling thermal loading of an electronic component material during ablation thereof, the method including: directing, along an axis, a first laser light beam to remove a portion of one side of the material thereby creating a first heat affected zone in the material, and simultaneously directing along the axis, a second laser light beam to remove a portion of a side of the material opposing the one side thereof thereby creating a second heat affected zone in the material, waiting a certain time period to permit the material to cool and to permit the heat affected zones to expand in the material, and after the waiting step, directing the laser light beams to further remove material in at least a portion of the heat affected zones to create a through hole in the material, wherein the waiting step is long enough to permit the heat affected zones to merge in the material.

10. The method of claim 9, wherein the workpiece is composed of multiple conductive and non-conductive layers.

11. The method of claim 9, wherein the material is composed of silicon.

12. A method of controlling thermal loading of an electronic component material during ablation thereof, the method including: directing a laser light beam to remove a first area of the material so as to create a first heat affected zone in the material, thereafter, directing a laser light beam to remove a second area of a material so as to create a second heat affected zone in the material, waiting a certain time period to permit the material to cool and to permit the heat affected zones to expand in the material, thereafter, directing the laser light beam to further remove material in the first heat affected zone, and thereafter, directing the laser light beam to further remove material in at least a portion of the second heat affected zone, wherein the waiting step is long enough to permit the heat affected zones to merge in the material.

13. The method of claim 12, wherein the, material is composed of multiple conductive and non-conductive layers.

14. The method of claim 12, wherein the material is composed of silicon.

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